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| AO4614B Complementary Enhancement Mode Field Effect Transistor General Description The AO4614B/L uses advanced trench technology MOSFETs to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. AO4614B and AO4614BL are electrically identical. -RoHS Compliant -AO4614BL is Halogen Free Features n-channel VDS (V) = 40V, RDS(ON)< 30m RDS(ON)< 38m p-channel VDS (V) = -40V, RDS(ON)< 45m RDS(ON)< 63m D2 ID = 6A (VGS=10V) (VGS=10V) (VGS=4.5V) ID = -5A (VGS=-10V) (VGS= -10V) (VGS= -4.5V) D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 S2 G1 S1 SOIC-8 n-channel Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Max n-channel Symbol VDS Drain-Source Voltage 40 VGS Gate-Source Voltage 20 Continuous Drain Current A Pulsed Drain Current B Avalanche Current B Repetitive avalanche energy L=0.1mH Power Dissipation TA=25C TA=70C B p-channel Max p-channel -40 20 -5 -4 -30 -20 20 2 1.28 -55 to 150 mJ W C A Units V V TA=25C TA=70C ID IDM IAR EAR PD TJ, TSTG 6 5 30 14 9.8 2 1.28 -55 to 150 Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter A t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead Symbol RJA RJL RJA RJL Device n-ch n-ch n-ch p-ch p-ch p-ch Typ 48 74 35 48 74 35 Max 62.5 110 50 62.5 110 50 Units C/W C/W C/W C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4614B N Channel Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions ID=250A, VGS=0V VDS=40V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=6A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=5A Forward Transconductance VDS=5V, ID=6A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125C 1.7 30 24 36 30 19 0.76 1 2 516 VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 82 43 4.6 8.9 VGS=10V, VDS=20V, ID=6A 4.3 2.4 1.4 6.4 VGS=10V, VDS=20V, RL=3.3, RGEN=3 IF=6A, dI/dt=100A/s 2 Min 40 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current 1 5 100 2.5 3 30 45 38 A nA V A m S V A pF pF pF DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance 650 SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qg (4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time 10.8 5.6 nC nC nC nC ns ns ns ns 3.6 16.2 6.6 18 10 24 Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/s ns nC A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. 9 D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. 12 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev0 : Sept 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4614B TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 40 35 30 25 ID (A) 20 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics VGS=3.5V 5 0 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 1.8 Normalized On-Resistance VGS=4.5V 1.6 1.4 1.2 1 0.8 0.6 0 5 10 15 20 -50 -25 0 25 50 75 100 125 150 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V ID=5A VGS=10V ID=6A 10V 5V 4.5V 20 ID(A) 4V 15 10 125C 25C 30 25 VDS=5V 36 34 32 RDS(ON) (m) 30 28 26 24 22 20 VGS=10V 80 70 60 RDS(ON) (m) 125C 25C IS (A) 50 40 30 20 10 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage ID=6A 100 10 1 0.1 9 12 125C 25C 0.01 0.001 0.0001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4614B TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 10 8 VGS (Volts) 6 4 2 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=20V ID= 6A Capacitance (pF) 800 600 Ciss 400 200 Crss Coss 0 0 10 20 30 40 VDS (Volts) Figure 8: Capacitance Characteristics 100 10s 10 Power (W) ID (Amps) 100s 1 RDS(ON) limited TJ(Max)=150C TA=25C 0.01 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 1ms 10ms 0.1s 1s 10s 1000 TJ(Max)=150C TA=25C 100 10 0.1 DC 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=74C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 9 12 0.1 PD Ton Single Pulse T 100 1000 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4614B P-Channel Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions ID= -250A, VGS=0V VDS= -40V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID= -250A VGS= -10V, VDS= -5V VGS= -10V, ID= -5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS= -4.5V, ID= -4A Forward Transconductance VDS= -5V, ID= -5A Diode Forward Voltage IS= -1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C -1.7 -30 36 52 50 13 -0.76 -1 -2 940 VGS=0V, VDS= -20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 97 72 14 17 VGS= -10V, VDS= -20V, ID= -5A 7.9 3.4 3.2 6.2 VGS= -10V, VDS= -20V, RL=4, RGEN=3 IF= -5A, dI/dt=100A/s 2 Min -40 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current -1 -5 100 -2 -3 45 65 63 A nA V A m S V A pF pF pF DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance 1175 SWITCHING PARAMETERS Qg (-10V) Total Gate Charge Qg (-4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time 22 10 nC nC nC nC ns ns ns ns 8.4 44.8 41.2 21 14 27 Body Diode Reverse Recovery Charge IF= -5A, dI/dt=100A/s ns nC A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with 2 A: The value of R JA is in any given application depends onon 1in FR-4 board board design. Thein a still air environmenton the A =25C. The T A =25C. The value measured with the device mounted the user's specific with 2oz. Copper, current rating is based with T value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance t 10s thermal resistance rating. rating. B: Repetitive rating, pulse width limited by junction temperature. 9 B: Repetitive is the sum of width limitedimpedence from junction to lead R and lead to ambient. C. The R JA rating, pulse the thermal by junction temperature. JL 12 C. The R JA ischaracteristics in Figures 1 to 6,12,14 are obtained usingRJL and lead to ambient. 0.5% max. D. The static the sum of the thermal impedence from junction to lead <300 s pulses, duty cycle 2 D. The static characteristics in with the 1 to 6,12,14 are obtainedFR-4 board with 2oz. Copper, in a still air environment with E. These tests are performed Figures device mounted on 1 in using 80 s pulses, duty cycle 0.5% max. E. A=25C. The are performed with the single pulse rating. 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The T These tests SOA curve provides a device mounted on SOA curve provides a single pulse rating. Rev0 : Sept 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4614B TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 30 -10V 25 20 -ID (A) 15 10 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 12: On-Region Characteristics VGS=-3.5V -4.5V -5V -4V 20 -ID(A) 15 10 5 0 1.5 2 2.5 3 3.5 4 4.5 -VGS(Volts) Figure 13: Transfer Characteristics 1.7 Normalized On-Resistance 1.5 1.3 1.1 0.9 0.7 0 5 10 15 20 -50 -25 0 25 50 75 100 125 150 VGS=-4.5V ID=-4A VGS=-10V ID=-5A 125C 25C 25 30 VDS=-5V 65 60 55 RDS(ON) (m) 50 45 40 35 30 -ID (A) Figure 14: On-Resistance vs. Drain Current and Gate Voltage 130 ID=-5A 110 RDS(ON) (m) 90 70 50 30 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 16: On-Resistance vs. Gate-Source Voltage VGS=-10V VGS=-4.5V Temperature (C) Figure 15: On-Resistance vs. Junction Temperature 100 10 1 -IS (A) 125C 0.1 25C 9 12 125C 0.01 0.001 0.0001 0.0 0.2 0.4 0.6 25C 0.8 1.0 1.2 -VSD (Volts) Figure 17: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4614B TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 8 -VGS (Volts) 6 4 2 0 0 3 6 9 12 15 18 Qg (nC) Figure 18: Gate-Charge Characteristics VDS=-20V ID= -5A Capacitance (pF) 1400 1200 1000 800 600 400 200 0 0 10 20 30 40 -VDS (Volts) Figure 19: Capacitance Characteristics Crss Coss Ciss 100 10s 10 -ID (Amps) 1000 TJ(Max)=150C TA=25C 1 RDS(ON) limited TJ(Max)=150C TA=25C 0.1 1 -VDS (Volts) Figure 20: Maximum Forward Biased Safe Operating Area (Note E) 0.1 DC 10 1ms 10ms 0.1s 1s 10s Power (W) 100s 100 10 0.01 100 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 21: Single Pulse Power Rating Junction-to Ambient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=74C/W 9 12 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 22: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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